国家/地区 中国（4）
IPC部 C（3）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 LIU H（4）
公开年 2010（4）
申请年 2009（2）  2010（2） 
专利权人 CHINESE ACAD.（3）

Preparation of halogenated graphite for use in preparation of halogenated graphene, involves reacting expanded graphite with halogen simple substance under microwave radiation.

ZHENG J, LIU H, LIU Y, ZHU D, WU B, YU G, DI Z, GUO Y

Graphene metal oxide semiconductor (MOS) transistor for graphene-based integrated circuit, has gate region arranged on trench region while gate medium is arranged between gate region and trench region.

WANG P, ZHANG W, LIU H, GU J

Preparation of graphene comprises reacting expanded graphite and organic amine solution using solvent-thermal method, carrying out ultrasonic dispersion, centrifuging, and collecting liquid supernatant.

DI Z, GUO Y, LIU H, LIU Y, YU G, ZHENG J, ZHU D

Patterned arrangement of solution state grapheme comprises treating substrate, dropping graphene solution on substrate obtained then carrying out film swinging treatment, and thermally treating substrate.

DI Z, GUO Y, LIU H, LIU Y, YU G