国家/地区 台湾（4）
IPC部 C（3） H（3）
IPC大类 C01（3） H01（3） C23（2）
IPC小类 C01B（3） H01L（3） C23C（2）
IPC C01B031/04（2） C23C016/26（2） H01L021/02（2）
H01L021/768（2）
发明人 LU C（4）
公开年
申请年
专利权人

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Forming interconnect structure, comprises e.g. etching patterned interconnect stack and first etch stop layer to form first conductive lines and second conductive lines and expose top surface of first etch stop layer and barrier layer.

JIANG H, LU C, REN H, LANG C, HWANG H D, NAIK M

Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.

JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H

Graphene manufacturing system, useful for growing graphene layers on insulated surface of work piece, comprises furnace body having working chamber, catalyst source, hydrogen source, and carbon feedstock source.

TENG P, CHIU P, LU C, TENG P Y, CHIU P W, LU C C