国家/地区 中国（5）
IPC部 C（4） H（2）
IPC大类 C08（2） H01（2）
IPC小类 C08G（2） C08K（2） C08L（2）
H01L（2）
IPC C08G018/10（2） C08G018/32（2） C08G018/34（2）
C08G018/48（2） C08K003/04（2） C08L075/08（2）
H01L021/336（2）
发明人 LU G（5）
公开年 2014（5）
申请年 2014（4） 
专利权人 SHANGHAI INS.（3） ZHEJIANG WEI.（2）

Manufacture of graphene flash memory involves patterning conductive layer formed on semiconductor substrate, forming source/drain electrodes, dielectric layers, graphene layer and gate electrode, and etching dielectric layers.

WANG H, JIANG M, LI L, XIE X, WU T, CHEN J, LU G, XIE H, ZHANG X

Graphene contact resistance reducing method, involves forming source and drain electrode area on surface of thin film, forming hole in drain metal electrode, forming grid medium layer on film, and fixing gate with grid medium layer.

WANG H, JIANG M, XIE X, WU T, CHEN J, LU G, SUN Q, XIE H, ZHANG X

Preparation of graphene/aqueous polyurethane nanocomposite includes vacuum dehydrating polyether polyol, adding toluene diisocyanate, mixing, reacting, adding dihydroxy acid, reacting, cooling, diluting, emulsifying and drying.

XU X, LI Y, CHEN G, FENG J, GAO C, LU G

Preparing graphene oxide-aqueous polyurethane nanocomposite used in e.g. anticorrosion coatings involves obtaining prepolymer using e.g. polyether polyol, reacting mixture using e.g. dihydroxy acid, emulsifying and drying product.

XU X, LI Y, CHEN G, FENG J, GAO C, LU G

Preparation of graphene crystal domain involves forming copper-nickel double sided substrate, introducing hydrogen, reacting, introducing carbon source, growing graphene crystal domain, introducing argon gas and cooling.

YANG C, WU T, LU G, ZHANG X