国家/地区 中国（4） 美国（2） 世界知识产权组织（2）
IPC部 H（4） B（2）
IPC大类 H01（4） B82（2）
IPC小类 H01L（4） B82Y（2）
IPC H01L029/78（4） H01L021/336（3） B82Y040/00（2）
B82Y099/00（2） H01L021/04（2） H01L021/20（2）
H01L029/06（2） H01L029/423（2）
发明人 LUO Z（4）
公开年 2012（2） 2013（2）
申请年 2011（2）  2012（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（4）

MOSFET, has source/drain region formed on semiconductor substrate, and gate conductor extended toward upper part of source/drain region, where semiconductor substrate is formed with oxide semiconductor substrate and graphene layer.

CHEN L, LUO Z, ZHU Z

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Semiconductor device, has cap layer set on gate stack and sidewall surrounding gate stack and cap layer, and semiconductor layers epitaxially grown on exposed graphene layer, where metal contact layers are formed on semiconductor layers.

YIN H, LUO Z, ZHU H

Method for manufacturing semiconductor device, involves forming graphene layer on insulating layer, forming gate structure on graphene layer, and forming doped region in semiconductor substrate.

LUO Z, YIN H, ZHU H