国家/地区 中国（4）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（2）
IPC H01L021/336（2） H01L029/78（2）
发明人 LUO Z（4）
公开年 2013（4）
申请年 2012（3） 
专利权人 INST MICROEL.（2） WUHAN GUOMO .（2）

MOSFET, has source/drain region formed on semiconductor substrate, and gate conductor extended toward upper part of source/drain region, where semiconductor substrate is formed with oxide semiconductor substrate and graphene layer.

CHEN L, LUO Z, ZHU Z

Method for preparing graphene-polyaniline-carbon nanotube stereo three-dimensional compound, involves mixing graphene and carbon nanotubes, and adding aniline hydrochloric acid solution and aqueous solution followed by stirring and washing.

LUO Z, TANG H, XU X, ZHU L

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Preparing graphene oxide-polyaniline composite nano sheet, comprises e.g. introducing graphene oxide and distilled water into ultrasonic reactor, pouring aniline-inorganic acid solution, reacting, centrifuging, separating, and reducing.

LI J, LUO Z, TANG H, XU X, WANG Z