国家/地区 美国（4）
IPC部 B（2） H（2）
IPC大类 B01（2） H01（2）
IPC小类 H01L（2）
IPC H01L021/336（2） H01L029/06（2） H01L029/10（2）
H01L029/12（2） H01L029/16（2） H01L029/24（2）
H01L029/423（2） H01L029/66（2） H01L029/78（2）
H01L029/786（2）
发明人 MA H（4）
公开年 2021（2）
申请年 2021（2） 
专利权人 TAIWAN SEMIC.（2）

Method for forming semiconductor device, involves configuring gate structure, source and drain components, semiconductor structure and two-dimensional material layer, and utilizing semiconductor structure and two-dimensional material layer as channels between source and drain components.

SHEN Z, KHADERBAD M A, MA H, SATHAIYA D M, ABHIJITH K M, SHEN T, DHANYAKUMAR S M

Semiconductor device comprises gate structure above channel element comprising channel layer containing silicon, germanium or semiconductor elements, and channel layer containing two-dimensional material.

KHADERBAD M A, MA H, LIN G, SHEN Z, SATHAIYA D M, LIN K, SHEN T, KARDERBARTMURUNALAPJIT, SATAYYADANYAKUMAHAVIER, SENSORMIN, DHANYKUMAR S M

Device useful for continuous production of graphene composite material comprises e.g. raw material preparing device, reaction device and extraction device for extracting and purifying of crude composite material obtained in reaction device.

HUANG R, JIANG Y, LUO Z, LIANG Y, MA H, CAO J, ZHOU L, LIU X, DAI S

Article for nanofiltration, desalination and pervaporation, has second layer of nanoporous graphene and nanoporous graphene oxide on portion of surface of first layer such that additive formed between first and second layers.

CHU B, HSIAO B S, MA H, WANG Z