国家/地区 美国（4）
IPC部 H（4）
IPC大类 H01（4） H05（2）
IPC小类 H01L（4） H05K（2）
IPC H01L023/00（3） H01L025/065（3） H01L023/373（2）
H01L023/498（2） H05K001/02（2）
发明人 NAKANO E（4）
公开年 2021（2） 2022（2）
申请年 2021（2） 
专利权人 MICRON TECHN.（4）

Anisotropic conductive film structure comprises array of discrete conductive regions within continuous region of adhesive dielectric material, where discrete conductive regions of array is mutually laterally spaced by pitch, and discrete conductive regions comprises conductive carbon-based material.

TUTTLE M E, NAKANO E

Semiconductor assembly comprises substrate having top surface and including graphene layer below top surface and configured to transfer thermal energy along lateral direction across substrate, semiconductor device over top surface of substrate, thermal connector and heat spreader.

NAKANO E, FAY O R, YOO C H

Fabricating semiconductor device package, involves forming carbon-based material on sacrificial substrate, inverting sacrificial substrate, bonding sacrificial substrate to wafer comprising semiconductor device components, and removing sacrificial substrate to leave carbon-based material over wafer.

NAKANO E

Semiconductor device assembly for semiconductor module, has substrates which include graphene layer thermally coupled to thermal connector and configured to transfer thermal energy along horizontal direction across substrate.

YOO C H, FAY O R, NAKANO E