国家/地区 日本（5）
IPC部 H（5） C（3）
IPC大类 H01（5） C01（3）
IPC小类 H01L（5） C01B（3）
IPC H01L029/786（4） C01B031/02（3） H01L029/06（3）
H01L051/05（3） H01L051/30（3） H01L051/40（3）
H01L021/02（2） H01L021/336（2） H01L029/66（2）
发明人 OFUCHI M（5）
公开年 2009（2） 2015（2）
申请年
专利权人 FUJITSU LTD（5）

Electronic device e.g. tunnel transistor, comprises channel layer comprising graphene(s) with edge portions terminated with modifying groups different from each other bonded to each other, and electrodes formed on channel layer.

SATO S, JIPPO H, OHFUCHI M, OFUCHI M

Semiconductor device for use as field effect transistor, comprises graphene bilayers, which does not contain the doped impurities, multilayer carbon nanotubes, semiconductor elements and electrodes.

OFUCHI M

Semiconductor device used as solar cell for electronic device, contains carbon nanotubes bonded with electrode formed using graphene and spaced apart with specified distance.

OFUCHI M, OBUCHI M

Semiconductor device e.g. transistor has channel formed of bi-layer graphene film.

HARADA N, OFUCHI M

Electronic device manufacturing method involves regulating crystal orientation along extension direction of graphene and width of graphene with scanning probe microscope.

HIROSE S, IWAI D, OFUCHI M, OBUCHI M