国家/地区 美国（8） 韩国（7） 中国（6） 欧洲专利局（EPO）（3） 世界知识产权组织（2）
IPC部 H（7） C（6） B（4）
G（2）
IPC大类 H01（7） C01（5） B82（3）
C25（3） G01（2）
IPC小类 C01B（5） H01L（4） H01M（4）
B82Y（3） C25D（3） H01G（2）
IPC C01B032/182（4） B82Y030/00（3） C01B031/04（2）
C01B032/186（2） C25D003/38（2） C25D005/50（2）
C25D007/06（2） H01L029/16（2） H01M004/36（2）
H01M004/62（2）
发明人 PARK S（8）
公开年 2018（6） 2017（2）
申请年 2017（8）
专利权人 SAMSUNG ELEC.（4） ILJIN MATERI.（2）

Semiconductor device comprises substrate comprising insulator and semiconductor comprising group IV material and/or group III-V compound, and graphene layer grown on surface of semiconductor.

SHIN K, SHIN H, CHO Y, NAM S, PARK S, LEE Y, SHIN K W, SHIN H J, CHO Y C, NAM S G, PARK S J, LEE Y S

Nano/micro composite fiber for storing electrical energy, used in high performance supercapacitor, comprises pairs of microfiber bundles containing graphene or graphene/carbon nanotube, nanofiber web, electrolyte layer and insulating film.

PARK S, SHIN M, KIM H, YEO C, CHO Y, CHO K

Optical sensor comprises first electrode, graphene quantum dot layer, graphene quantum dot layer which comprises multiple of first graphene quantum dots which are bonded to first functional group and multiple of second graphene quantum dots.

LEE J, SHIN H, LEE D, PARK S, LEE K, LEE E, JO S, HEO J, LEE G, LI Y, ZHAO C, HUH J, LEE J H, SHIN H J, LEE D W, PARK S J, LEE K Y, LEE E K, JO S H, HEO J S

Three-dimensional graphene structure preparation involves forming graphene precursor by heating carbohydrate and gas generator, forming graphene structure having cavity by carbonizing graphene precursor, and then forming nanopores.

KIM T, YOU I, KIM B N, KIM I G, JUNG S, PARK S, YOUNG K T, KYU Y I, NA K B, GYOO K I, HOON J S, JUN P S

Porous silicon composite clusters used in carbon composite for electrode, comprise porous core comprising silicon secondary particles comprising aggregates of silicon primary particles comprising silicon, silicon oxide and graphene.

SON I, LEE J, PARK S, HAN S, SON I H, LEE J M, PARK S Y, LEE J H, HAN S S, LI Z

Heat dissipation structure using graphene quantum dots, has heat dissipation film which is placed on heating element to dissipate heat generated from heating element, to outside.

LEE D, KIM S, SEOL M, JEONG S, NAM S, PARK S, SHIN H, XUE M, ZHENG C, NA S, LEE D W, KIM S W, SEOL M S, JEONG S J, NAM S G, PARK S J, SHIN H J

Electrolytic copper foil used for producing graphene, has preset ratio of surface roughness of copper foil and surface roughness of copper foil after heat treatment.

JO T J, LEE S H, PARK S, SONG K D, TAE J J, SUNHYOUNG L, SEULKI P, KIDEOK S, JO T, LEE S, SONG K

Electrolytic copper foil used for forming graphene during fabrication of semiconductor component for computer, electronic paper and display, has preset tensile strength before and after subjecting to heat-treatment.

JO T J, LEE S H, PARK S, SONG K D, TAE J J, SUNHYOUNG L, SEULKI P, KIDEOK S, JO T, LEE S, SONG K