国家/地区 韩国（4） 美国（2）
IPC部 H（3） B（2） C（2）
IPC大类 H01（3） B01（2） C01（2）
IPC小类 H01L（3） B01J（2） C01B（2）
IPC C01B031/02（2） C01B031/04（2）
发明人 RHO J（4）
公开年 2014（3）
申请年 2013（4）
专利权人 LG ELECTRONI.（4）

Thin film silicon solar cell manufacturing method, involves forming polycrystalline silicon on graphene by utilizing thin film structure, where amorphous silicon is heat-treated on graphene that is formed on metallic board.

RHO J, CHOI M, KIM T

Manufacturing method of silicon semiconductor element for organic LED, involves producing device structure using the polycrystalline silicon which is formed on graphene.

RHO J, CHOI M, KIM T

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B