国家/地区 欧洲专利局（EPO）（4） 美国（4） 世界知识产权组织（4） 中国（3） 台湾（2）
IPC部 H（4） G（2）
IPC大类 H01（4） G01（2）
IPC小类 H01L（4） G01J（2）
IPC H01L027/146（3） H01L029/16（3） G01J001/04（2）
G01J001/42（2） G01J003/51（2）
发明人 ROUVALA M（4）
公开年 2016（2）
申请年
专利权人 NOKIA CORP（3） NOKIA TECHNO.（3）

Method for providing transistor i.e. graphene FET, involves providing graphene on side of wafer, attaching semiconductor layer to interface, and providing connection from graphene to interface to form transistor with electrode and graphene.

POHJONEN H, KALLIOINEN S, ROUVALA M A K, POHJONEN K, ROUVALA M

Detector structure apparatus for electromagnetic radiation sensing, has two electromagnetic radiation sensor cells which have graphene as electromagnetic radiation absorbing material, electrical connections which are made of graphene.

VOUTILAINEN M, ROUVALA M

Photon sensing apparatus e.g. charge coupled device image sensor, for use in e.g. digital storage camera, has integrated graphene field effect transistor that is functioned as pre-amplifier for photodetecting structure.

VOUTILAINEN M, ROUVALA M, PASANEN P, PASANE P

Apparatus for sensing photons comprises photon sensing layers, which consists of graphene, arranged on top of each other and intermediate layer between each adjacent sensing layers.

VOUTILAINEN M, ROUVALA M, PASANEN P