国家/地区 日本（5）
IPC部 G（4） H（3） C（2）
IPC大类 G01（4） H01（3） C01（2）
IPC小类 H01L（3） C01B（2） G01N（2）
G01R（2）
IPC C01B032/15（2） C01B032/18（2） C01B032/182（2）
G01N027/00（2） G01N027/12（2） G01R033/09（2）
H01L043/08（2） H01L043/10（2）
发明人 SATO S（5）
公开年 2018（3） 2017（2）
申请年 2016（5）
专利权人 FUJITSU LTD（5）

Gas sensor for use in gas detection system for detecting chemical substance in nitrogen monoxide, has first electrode arranged with graphene film, and second and third electrodes that are provided in surface of semiconductor layer.

SATO S, HAYASHI K

Graphene nano-ribbon for e.g. magnetoresistive device, has zigzag-type edge structure in both ends of width direction, and in which one edge portion comprises methyl group and boron, and another edge portion comprises methyl group/nitrogen.

JIPPO H, SATO S

Semiconductor device e.g. large scale integrated circuit has graphene film that is provided on gate insulating film and doping layer is provided on graphene film for doping graphene film.

SATO S

Graphene nano ribbon for device e.g. magnetoresistive device comprises edge structure of zigzag type in both ends of width direction, and atom or molecule which is different to both ends.

SATO S, JIPPO H

Gas sensor used for medical device, has graphene film which is provided in upper direction of semiconductor layer and contacts gas, and barrier film is positioned between semiconductor layer and graphene film.

HARADA N, SATO S, HAYASHI K, YAMAGUCHI J