国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2） C23C（2）
IPC
发明人 SHI Z（4）
公开年 2020（2）
申请年 2019（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（4）

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.

ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G

Co-production method of low-layer graphene and hydrogen involves adding metal-containing catalyst to reaction vessel, heating, passing hydrocarbon gas into molten metal-containing catalyst, collecting solid product and gas and separating.

YU Q, SHI Z, XIE X

Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure used in microelectronic device, involves heating substrate, dissolving carbon source on surface of substrate and heating source materials.

YU G, WU T, XIE X, SHI Z, CHEN J, ZHANG Y, SUI Y, CHEN Z