国家/地区 中国（6）
IPC部 C（3） G（3）
IPC大类 C01（3） G01（3）
IPC小类 C01B（3） G01N（3）
IPC C01B031/04（3）
发明人 SUI Y（6）
公开年 2014（3） 2015（3）
申请年 2014（6）
专利权人 SHANGHAI INS.（6）

Method for representing graphene, involves forming graphene on substrate, and followed by judging damage condition of graphene surface according to corrosion degree of lower part of graphene substrate.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Method for determining use of chemical vapor deposition grown graphene crystal orientation of polycrystalline copper substrate surface, has determining use of graphene crystal orientation of copper substrate surface.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Wet etching chemical transfer method, useful for improving surface cleanliness of graphene, comprises depositing metal layer on metal-catalyzed substrate and graphene, and coating polymethylmethacrylate organic colloid on metal layer.

SUI Y, ZHANG H, ZHANG Y, YU G, CHEN Z, LI X, ZHU B, TANG C

Continuous graphene film distinguishing method, involves coating organic colloid layer on metal catalytic substrate, where organic colloid layer and graphene film combination are placed in deionized water, and obtaining graphene film.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G, ZHU B, TANG C

Increasing mobility of graphene comprises preparing hydrazine hydrate solution, soaking graphene sample in hydrazine hydrate solution for specified time, and taking out for blow drying.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G