国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2） H01L029/78（2）
发明人 TANG Z（4）
公开年 2012（4）
申请年 2012（3） 
专利权人 BEIJING ZHON.（2）

Silicon stone graphene FET has source region and drain region of FET are located on graphene layer in channel area which is formed between source region and drain region.

CHEN Z, KUANG W, LIU X, TANG Z

Preparation of graphene oxide involves preparing primary oxidized carbon fiber, drying, processing, observing color change, filtering, drying obtained oxidized graphite carbon fiber, dissolving in water, and conducting ultrasonography.

CHEN C, HE D, YANG J, TANG Z

Silicon stone graphene field effect transistor, has source region and drain region arranged on graphite layer, channel arranged between source region and drain region, and low resistivity silicon layer arranged on silicon carbide substrate.

CHEN Z, KUANG W, LIU X, TANG Z

Preparation of graphene comprises mixing graphite oxide and tetrahydrofuran, ultrasonically treating, reducing oxidized graphite alkene in graphene oxide suspension, adding lithium aluminum hydride, and dripping phosphorus tribromide.

LI Z, LIU D, LIU H, LUO Y, MA L, TANG Z, YAN J