国家/地区 日本（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L029/786（4） H01L021/28（3） H01L021/336（3）
H01L029/06（2）
发明人 TATENO Y（4）
公开年 2017（3）
申请年 2016（4）
专利权人 SUMITOMO ELE.（4） UNIV TOHOKU（4）

Graphene transistor has graphene film that is arranged on support substrate, where ohmic electrode is arranged on graphene film and intermediate layer is arranged between support substrate and graphene film.

OKADA M, YONEMURA T, SUEMITSU M, FUKIDOME H, NAGASAWA H, TATENO Y

Electronic apparatus e.g. FET has graphene layer on which ohmic electrode is contacted, and whose surface ratio of nickel-carbon bond with respect to carbon-carbon bond is set to preset range.

YONEMURA T, OKADA M, SUEMITSU M, FUKIDOME H, NAGASAWA H, TATENO Y

Electronic apparatus i.e. FET, has ohmic electrodes provided on graphene layer, where gap between ohmic electrodes measured using Raman spectroscopy is larger than D band strength ratio with respect to G band in which carrier drives.

YONEMURA T, OKADA M, NAGASAWA H, SUEMITSU M, FUKIDOME H, TATENO Y

Laminated body for use in FET, has graphene film fixed on main surface of substrate portion, where film comprises atomic arrangement and exposed surface of graphene film is main surface of graphene film opposite to substrate portion.

MITSUHASHI F, ISHIZUKA T, UENO M, TSUKUDA Y, TATENO Y, SUEMITSU M, FUKIDOME H, NAGASAWA H, MIHASHI F