国家/地区 日本（4） 美国（4）
IPC部 H（4） C（3） B（2）
IPC大类 H01（4） C01（3） B32（2）
IPC小类 H01L（4） C01B（3） B32B（2）
IPC H01L021/02（4） H01L021/336（4） H01L029/16（4）
H01L029/786（4） C01B032/15（3） C01B032/18（3）
C01B032/182（3） H01L051/05（3） H01L051/30（3）
B32B009/00（2） H01L029/66（2）
发明人 TATENO Y（4）
公开年 2017（3）
申请年 2017（4）
专利权人 SUMITOMO ELE.（4） UNIV TOHOKU（3）

Field effect transistor comprises a substrate and a graphene layer that is provided on the substrate, where drain electrode is provided on the graphene layer and a gate insulating film is provided on the graphene layer.

TATENO Y, UENO M, OKADA M, MITSUHASHI F, SUEMITSU M, FUKLDOME H, MIHASHI F, FUKIDOME H

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Substrate for electronic device, such as a field-effect transistor, includes graphene film having atomic arrangement oriented in relation to atomic arrangement of material forming the surface layer region of support substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, MIHASHI F