国家/地区 日本（4） 美国（4）
IPC部 H（4） B（3） C（2）
IPC大类 H01（4） B82（3）
IPC小类 H01L（4） B82Y（3）
IPC H01L021/3205（4） H01L021/768（4） H01L023/532（4）
B82Y030/00（2） H01L023/48（2）
发明人 WADA M（4）
公开年 2013（2） 2014（2）
申请年 2012（2）  2013（2） 
专利权人 YAMAZAKI Y（4）

Semiconductor device has metal interconnect and graphene interconnect that are stacked to one another.

SAKATA A, KITAMURA M, WADA M, KATAGIRI M, YAMAZAKI Y, KAJITA A

Semiconductor device, has roll form graphene layer formed to surround catalyst metal layer and for growing with side surface of catalyst metal layer to set as growth origin, where facet is formed on side surface of catalyst metal layer.

WADA M, YAMAZAKI Y, KAJITA A, ISOBAYASHI A, SAITO T

Manufacturing method of semiconductor device, involves forming graphene layer on catalyst layer after planarizing exposed surface of catalyst layer by oxidation-treating.

YAMAZAKI Y, KATAGIRI M, SAKAI T, SAKUMA H, KITAMURA M, SAKATA A, WADA M, KAJITA A, MIZUSHIMA I, SAKUMA N

Wire used in semiconductor device, has graphene wires formed on metal part and electrically connected to metal film on substrate, in which metal film and metal part are formed using different metals or alloys.

YAMAZAKI Y, WADA M, KITAMURA M, SAKAI T