国家/地区 日本（4） 美国（4）
IPC部 H（4） C（3）
IPC大类 H01（4） C01（3）
IPC小类 H01L（4） C01B（3）
IPC H01L021/3205（4） H01L021/768（4） H01L023/532（4）
C01B031/02（3） H01L021/285（3）
发明人 WADA M（4）
公开年 2016（4）
申请年 2015（4） 
专利权人 TOSHIBA KK（4）

Manufacture method of semiconductor device, involves forming graphene interconnect by patterning graphene film into which dopant is introduced.

WADA M, YAMAZAKI Y, MIYAZAKI H, KAJITA A, SAITO T, ISOBAYASHI A, ISHIKURA T, KATAGIRI M, SAKAI T

Semiconductor device such as metal oxide semiconductor (MOS) transistor and capacitor, has graphene layer with first graphene layer and is provided on second catalyst region.

SAITO T, KITAMURA M, SAKATA A, WADA M, KAJITA A, SAKAI T

Method for manufacturing semiconductor device, involves forming first film, pattern of second film on upper surface of first film and graphene film on upper surface of first film and from side surface of pattern of second film.

ISOBAYASHI A, KITAMURA M, YAMAZAKI Y, KAJITA A, SAITO T, ISHIKURA T, SAKATA A, SAKAI T, WADA M

Semiconductor device, has foundation layer including first and second layers, catalyst layer formed on surface of foundation layer, where catalyst layer includes protruding area, and graphene layer is in contact with protruding area.

ISHIKURA T, KAJITA A, SAKAI T, ISOBAYASHI A, WADA M, SAITO T, KITAMURA M, SAKATA A