国家/地区 美国（3）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L047/00（2）
发明人 WANG S（4）
公开年 2011（4）
申请年 2010（3） 
专利权人 HEWLETTPACKA.（3） MIAO F（3） WANG S（3） WILLIAMS R S（3）
WU W（3） YANG J（3）

Hall integrated circuit, has amplifier provided with hall element and FET, where hall element is provided with two exciting electrodes, two hall electrodes and graphene channel, and hall electrodes are connected with two sides of channel.

PENG L, WANG S, XU H, ZHANG Z

Graphene memristor used as switches in electronic circuits comprises two electrodes, active region interspersed between the electrodes, defective graphene structure, fast diffusing ions, and a source that generates the electric field.

MIAO F, YANG J, WU W, WANG S, WILLIAMS R S

Defective graphene-based memristor, used in nanoelectronic memories, computer logic and neuromorphic computer architectures, comprises first electrode, defective graphene structure, memristive material, second electrode and voltage source.

YANG J, MIAO F, WU W, WANG S, WILLIAMS R S

Memristive device used in crossbar array, has graphene (20) or graphite that is arranged between active region and bottom electrode or top electrode.

YANG J, MIAO F, WU W, WANG S, WILLIAMS R S