国家/地区 中国（4） 美国（2） 世界知识产权组织（2）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/336（2） H01L029/06（2） H01L029/78（2）
发明人 WANG W（4）
公开年 2012（2）
申请年 2010（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（4）

Method for calculating cut-off frequency of small signal model of graphene transistor, involves obtaining cut-off frequency of MOSFET, and establishing feedback modification small signal equivalent model.

LU N, LIU M, WANG W, XU G, LI L, WANG L

Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.

LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T

Graphene device manufacturing method, involves obtaining substrate, forming negative type or positive type graphene layer on substrate, forming grid regionon graphene layer, and forming inter-layer on graphene layer.

CHEN D, WANG W, ZHAO C

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T