国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG X（4）
公开年 2016（2）
申请年 2016（4）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（4）

Graphene growth method used for increasing the nucleation density of graphene, involves providing germanium substrate, performing ion implantation on germanium substrate, annealing, providing carbon source and growing.

DI Z, MA J, ZHANG M, WANG G, JIA P, WANG Z, WANG X

Preparation of germanium-based graphene nanopore by providing germanium-based graphene, performing ion implantation on germanium-based graphene, generating point defects in graphene and annealing to etch point defects.

DI Z, MA J, ZHANG M, XUE Z, JIA P, WANG Z, WANG G, WANG X

Method for preparing quantum hall device, involves forming superconducting thin film layer on substrate, covering with dielectric thin film layer, and forming graphene layer, followed by forming metal electrode.

WANG H, XIE H, WANG X, XIE X, JIANG M

Photo-resist graphene removing method, involves forming silicon nitride layer on photo-resist graphene part, performing photo-resist acetone leaching part removing process, and performing photo-resist graphene removing process.

DI Z, JIA P, MA J, WANG G, WANG X, XUE Z, ZHANG M, ZHENG X