国家/地区 中国（6）
IPC部 C（4） B（2） H（2）
IPC大类 C01（4） B82（2） H01（2）
IPC小类 C01B（4） B82B（2） H01L（2）
IPC C01B031/04（4）
发明人 WANG Y（6）
公开年 2010（3） 2011（2）
申请年 2009（6）
专利权人 CHINESE ACAD.（2）

Method for performing anisotropic etching of graphene, involves cutting graphene and patterning graphene, to form zigzag edge.

WANG Y, YANG R, ZHANG G, SHI D, ZHANG L

Switching device for graphene nanometer electromechanical system, has graphene tape suspended over drain electrode and connected or disconnected with drain electrode when graphene tape is deformed.

WANG Y, YANG R, ZHANG G, SHI Z, SHI D

Production of graphene involves adding oxidized graphite in polar organic solvent, ultrasonically dispersing to obtain suspended dispersing solution, and cooling.

ZHANG X, ZHANG G, XIE L, MA Y, HAN J, SHA J, WANG Y

Producing single-flake graphene for use in microelectronic elements, lithium ion batteries, fuel batteries and reinforced composite nano-material, involves utilizing single-flake oxidized graphene.

WANG Y, XU L, YANG W, ZHANG J

Preparation of functional nanographene involves adding graphene oxide into water, adding penetrants, ultrasonically or mechanically stirring to form brown or black suspension, oscillating, increasing temperature, washing and drying.

CONG F, HUANG L, LIU J, TANG J, WANG Y, ZHANG L

Epitaxial growth of graphene on silicon surface of silicon carbide by hydrogen etching silicon surface to eliminate surface scratch and form regular step-like strips, removing oxide from surface, and heating surface in presence of argon gas.

GUO H, TANG X, WANG D, WANG Y, ZHANG Y