国家/地区 中国（15）
IPC部 C（12） B（2） H（2）
IPC大类 C01（7） C08（4） B01（2）
H03（2）
IPC小类 C01B（7） C08K（4） C08G（3）
C08L（3） B01D（2） H03F（2）
IPC C08K003/04（4） C01B032/186（3） C08K009/04（3）
C01B032/198（2） C08G018/42（2） C08G018/66（2）
C08G018/73（2） C08L063/00（2）
发明人 WEI C（15）
公开年 2017（11） 2018（4）
申请年 2017（15）
专利权人 13TH RES INS.（6） SHANDONG JIN.（4） UNIV GUILIN .（3）

Preparing single-layer graphene on the surface of ultra-nano diamond comprises pre-processing ultra-nano-diamond film for removing surface impurities and surface stress, forming metal layer and subjecting to high temperature annealing.

GUO J, WEI C, FENG Z, FANG Y, HE Z, WANG J, LIU Q, ZHOU C, GAO X

Flexible flame-retardant graphene phase change composite material used for manufacturing electronic devices, comprises graphene oxide solution and flame retardant phase change material that comprises 4,4'-diphenylmethane diisocyanate.

HONG W, JIAO T, SUN J, ZHAO X, WEI C, GAO J, WU S, ZHANG C, ZHANG B, TIAN H, ZHANG H, MI F

Silicon carbide composite ceramic comprises silicon carbide powder I, silicon carbide powder II, graphene nanosheet, charcoal black, silicon powder, dispersing agent and binding agent.

LI S, WEI C, LIU A, MENG Z, ZHANG Q

Modified chemical vapor deposition for preparing uniform graphene material, involves selecting silicon carbide substrate, cleaning, drying, vacuumizing, turning on microwave power, heating and removing gas adsorbed on surface substrate.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z, YU C

Graphene single radio frequency amplifier monolithic integrated circuit, has input circuit connected with amplifying circuit, input bias circuit connected with input circuit, and output biasing circuit connected with output circuit.

SONG X, WEI C, HE Z, FENG Z

Preparation of low-fold density graphene material involves taking insulating substrate, cleaning, drying, putting into chemical vapor deposition equipment, vacuumizing, turning on the microwave power, heating and reacting.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z

Preparing hydroxylated graphene comprises e.g. preparing oxidized graphite, then treating graphene oxide with high-power ultrasonic stripping apparatus, then subjecting liquid crystal to low-temperature supercritical pressure peeling.

ZHANG Z, ZHANG M, MOU Y, LI X, WEI C, YU W, MU Y

Preparation of graphene oxide, involves dripping microcrystalline graphite to reaction vessel containing sulfuric acid, adding oxidant under ice bath condition, stirring, placing mixed system in water bath, and dripping deionized water.

HU K, ZHANG M, MOU Y, WEI C, SONG Y, YU W

Industrial grade device used for purifying graphene oxide solution comprises membrane filtration unit, conduit, air pressure pipeline, material inlet and outlet.

WEI C, ZHANG M, HU K, MOU Y, ZHANG Z, LI X

Graphene RF amplifier, has output end impedance converter whose end is connected to output end blocking capacitor, where end of output end blocking capacitor is connected to signal output end of amplifier main body.

SONG X, WEI C, HE Z, FENG Z