国家/地区 中国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L029/06（2） H01L029/16（2） H01L029/78（2）
发明人 WEI J（4）
公开年 2022（2）
申请年
专利权人 UNIV SOUTHEAST（4）

High power density tunneling semiconductor device based on heterojunction has e.g. axisymmetric structure including an N+ substrate, where triple contact surface is formed between drift region of N-type region and the gate dielectric layer, and tunneling effect occurs at the triple interface.

SHI L, SUN W, LIU S, KUI Z, WANG H, FU H, WEI J

Semiconductor device for use in optoelectronics and power fields, has N-type buffer layer that is provided with N-type epitaxial layer, where surface of N-type epitaxial layer is provided with graphene electrode respectively.

SHI L, SUN W, LIU S, WANG H, XUE L, FU H, KUI Z, XU H, WEI J

Trench silicon carbide power device has P-type shielding layer which is arranged under bottom of graphene layer and gate oxide layer and passivation layer extends outward and covers top of graphene layer.

WEI J, FU H, ZHAO H, LIU S, SUN W, LU S, SHI L

Graphene channel silicon carbide power semiconductor transistor, has source electrode metal connected with N-type source region and P-type body contact region, and graphite strip located at inner surface of P-type base region.

LIU S, TANG L, LI S, ZHANG C, WEI J, SUN W, LU S, SHI L