国家/地区 中国（4）
IPC部 C（4）
IPC大类 C08（2） C23（2）
IPC小类 C08K（2） C08L（2） C23C（2）
IPC C08K003/04（2）
发明人 WEI T（4）
公开年 2014（4）
申请年 2013（3） 
专利权人 INST SEMICON.（2） JIANGSU ZHAO.（2）

Stripping graphene thin film involves utilizing surface graphene thin film with substrate, growing graphene film directly on substrate or epitaxially growing material, and peeling off epitaxial material to obtain desired product.

DUAN R, LI J, SUN L, WANG G, WANG J, WEI T, ZHAO Y

Composite material comprises vinyl resin, glass fiber, graphene oxide, low-profile agent, inorganic mineral filler, thickening agent, curing agent, and vinyl ester resin.

LU P, WEI T, ZHAO Q

Preparation of reinforced graphene polymethacrylimide foam used for manufacturing foam interlayer component, comprises mixing components, ultrasonically dispersing graphene, filling in glass mold, and carrying out polymerization and foaming.

LU P, WEI T, ZHAO Q

Gallium nitride growing method for graphene thin film, involves continuously filling protective gas to chemical vapor deposition (CVD) reaction chamber, and taking out substrate with grown graphene thin film in room temperature.

YI X, LI J, WEI T, ZHAO Y, DUAN R, SUN L, WANG G