国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L045/00（2）
发明人 WU D（3）
公开年 2010（3）
申请年 2010（3）
专利权人 UNIV FUDAN（2）

Disposable programmable storage unit for disposable programmable storage has graphene oxide layer which is disposed between upper electrode and lower electrode, and used as storage medium layer.

ZHOU P, ZHANG W, WU D, SUN Q

Resistor-type memory preparation method, involves performing industrial reaction ion etching oxidization and remote plasma oxidization treatment to graphene layer to form graphene oxide layer, and forming upper electrode.

ZHOU P, ZHANG W, WU D, SUN Q

Preparation of graphene and amorphous carbon composite film involves chemical deposition by filling amount of pyridine to anoxic reactor, and separation and purification by etching copper substrate located at lower layer.

LI C, ZHU H, WEI J, WANG K, WU D, LI X