国家/地区 中国（6）
IPC部 C（5） H（4）
IPC大类 C01（4） H01（4）
IPC小类 C01B（4） H01L（2） H01M（2）
IPC C01B031/04（2） C01B032/184（2） C01B032/194（2）
H01M004/62（2） H01M010/0525（2）
发明人 XIA Y（6）
公开年 2021（2）
申请年 2019（2） 
专利权人 INST MICROEL.（3）

Preparing lithium carboxymethyl cellulose used in preparation of cathode electrode, involves mixing cellulose, crosslinking agent and sodium hydroxide in ethanol solution, vacuumizing, alkalizing, etherifying, acidifying, and adding to lithium salt-ethanol solution for substitution reaction.

NIE Z, XIA Y, LI Y, ZHANG H, DU K, YU Q, ZHOU Z, LIU W, HE Y, ZHANG J, NIE B, XIA I, LEE F, DOU K, ABOVE C, ZHOU Z L, HUH Y, JIANG J, NIE Z Z, LI Y Q, DU Q

Device for wet transferring graphene film, comprises e.g. target substrate stage which is set in water tank, and is parallel to bottom of water tank, and target substrate set on upper surface of target substrate stage.

LU W, XIA Y, LI N, ZHAO L, LENG X, HE M, JIE X

Processing graphene thin film material useful in field-effect transistor, optoelectronics and microprocessor field, comprises e.g. adjusting carrier sample stage to processing positioning point and performing selective scanning modification.

XIE J, QU F, XIA Y, LI N, ZHAO L, GUAN Y

Preparing electrochemical high quality graphene comprises e.g. mixing the graphite with lithium to obtain graphite plugged compound layer, mixing the prepared graphene plugged compound layer in the electrolyte lithium ion battery.

WANG Y, XIA Y, WANG F

Preparation of graphene/high energy-nickel cobalt manganese composite for electrode material involves dispersing high energy-nickel cobalt manganese particles in solution of graphene oxide by ultrasonication, lyophilizing, and heating.

XIA Y, HOU M, LIU J, CHEN L, GUO S, JIANG R, LI C, ZHOU L, WANG L, LI Z, WNG L

Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.

XIA Y, LI C, XIE J, LUO W, ZHANG Y