国家/地区 中国（4）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（4）
IPC H01L033/00（2） H01L033/06（2）
发明人 XIANG C（5）
公开年 2017（5）
申请年 2016（3）  2017（2） 
专利权人 TCL GROUP CO.（2）

Preparation of graphene quantum dot used for photoluminescence diode involves taking natural graphite powder, adding sodium nitrate, concentrated sulfuric acid and potassium permanganate, stirring, heating, filtering, washing and drying.

CHEN W, ZHANG Q, HUANG Z, XIANG C, QIN Y, ZHENG Z, ZHANG W, ZHANG B

Method for manufacturing tactile sensor, involves preparing wafer, arranging graphene layer on passivation layer, forming graphene pattern on graphene layer, and performing wafer separating process to manufacture tactile sensor.

KIM M S, PARK Y, PARK M, AHN J H, PARK Y J, CHEN X, MIN S K, YON K P, MINHOON P, JONG H A, YONG J P, XIANG C

QLED, comprises substrate, anode, graphene oxide layer, quantum dot light emitting layer, oxidized graphene derivative layer and cathode, where graphene oxide derivative layer is composed of oxidized graphene derivative.

LIU J, CAO Y, XIANG C, QIAN L

Preparation of cobalt-nickel-tungsten alloy oxide-graphene composite material for electrode material, involves dripping sodium borohydride solution to graphene oxide solution, adding powder to hydrogen peroxide and oxidizing mixture.

ZOU Y, CAI C, XIANG C, XU F, SUN L

Preparation of quantum dot light-emitting diode involves forming layer of graphene oxide on substrate, coating mixed aqueous solution of tea polyphenol and hydrogen iodide, and forming e.g. light-emitting layer on resultant graphene.

LIU J, CAO Y, XIANG C