国家/地区 中国（19）
IPC部 H（10） C（7） B（4）
IPC大类 H01（8） C01（4） B82（2）
C09（2） H05（2）
IPC小类 C01B（4） H01L（3） H01M（3）
B82Y（2） H05K（2）
IPC C01B031/04（4） H01L021/336（2）
发明人 XIE H（19）
公开年 2013（10） 2014（6） 2015（3）
申请年 2013（19）
专利权人 SHANGHAI YUE.（10） UNIV SHANGHA.（5） JIANGSU YUED.（4） SHANGHAI INS.（4）

Preparation of graphene used for lithium battery assembly, involves mixing e.g. graphite, sodium nitrate and potassium permanganate, adding hydrogen peroxide and hydrochloric acid, and reducing graphite oxide using hydrazine hydrate.

LI Y, XU Y, XIE H

Graphene copper foil preparing method, involves providing copper lead with lead body, mixing graphite, additive and binder with dispersing agent to obtain copper lead, and selecting binder from hexyl gui polyvinylidene.

LI Y, XIE H, CHENG X

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Heating plate comprises bottom insulation layer, graphene-stabilized phase change material filling layer, panel, sealing adhesive between insulation layer, filling layer and panel, and heating device located below or in filling layer.

YU W, XIN S, XIE H

Graphene-containing high-strength antistatic polyester fiber fabric has shell fabric of woven radial and latitudinal fibers.

XIA L, YU W, XIE H

Graphene fiber insulation cable used in e.g. aerospace industry, has graphite fiber beam whose outside portion is coated with rubber insulation layer to form circular cross-section of graphite fiber insulation cable main portion.

YU W, XIE H, ZHAO J

Graphene conducting hot circuit substrate for electronic product, has substrate body provided with hot insulating layer, conductive layer and graphene layer, where thickness of graphene layer is in specific value.

YU W, XIE H, XIN S

Graphene device manufacturing method, involves forming PMMA layer on PVA layer, where thicknesses of PVA layer and PMMA layer are in specific range, and graphene layer formed in PMMA layer.

WANG H, JIANG M, XIE X, WU T, SUN Q, XIE H

Manufacturing method of graphene field effect transistor, involves etching surface of carbon nanotransistor and connecting carbon nanotransistor to sub-electrodes to form graphene nanometer belt on semiconductor substrate.

SUN Q, XIE X, WU T, XIE H, WANG H

Tunneling FET unit, has first dielectric layer arranged in graphite layer, insulating barrier layer provided with second dielectric layer that is arranged in top gate electrode, where gate electrode is connected to graphene nanometer belt.

WANG H, XIE X, TANG S, WU T, XIE H, LIU X, SONG Y, SUN Q