国家/地区 美国（7）
IPC部 C（7） B（6） H（3）
G（2）
IPC大类 C01（5） C23（5） B82（4）
C30（4） H01（3）
IPC小类 C01B（5） C23C（5） B82Y（4）
C30B（4）
IPC B82Y040/00（4） C23C016/26（4） C01B031/04（3）
C01B032/186（3） B82Y030/00（2） C01B032/182（2）
C23C016/02（2） C23C016/50（2） C30B029/02（2）
发明人 XIE X（7）
公开年 2012（3）
申请年 2011（2）  2017（2） 
专利权人 SHANGHAI INS.（5） CHINESE ACAD.（3） DING G（2） XIE X（2）

Method of making bipolar plate for fuel cell, involves hot isostatically pressing bag out metal foil under vacuum sealed bipolar plate blank at greater pressure and certain temperature, and detaching hot isostatically pressed bipolar plate blank from metal foil pouch to obtain bipolar plate.

XIE X, CHEN B, ZHANG X

Conductive ink comprises conductive nano-metal and a graphene dispersion liquid including a graphene, where graphene dispersion liquid is a first slurry, and the conductive ink further comprises a slurry sub-material.

ZHANG X, HU M, ZHANG M, XIE X, ZHU K, ZHU Y

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X