国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） C01B（2）
IPC C23C016/26（4）
发明人 XU C（4）
公开年 2022（2）
申请年 2022（2） 
专利权人 UNIV BEIJING.（3）

Transferring two-dimensional material by using higher fatty alcohol or higher fatty acid, comprises e.g. spin-coating to obtain higher fatty alcohol or fatty acid/two-dimensional material/substrate complex and obtaining higher aliphatic alcohol or fatty acid/two-dimensional material complex.

CHENG H, XU C, ZHOU T, REN W

Directly growing patterned graphite on integrated circuit chip, involves cutting ultra-thin copper foil, pressing, placing chip sample in thermal chemical vapor deposition system, dipping into copper corrosion liquid, etching lower copper through a poly(methyl methacrylate) layer and drying.

HU L, DENG J, QIAN F, XIE Y, XU C

Direct growing method for large area graphene on oxide insulating substrate involves spin coating layer of polymethyl methacrylate (PMMA) film as an etching support layer after finishing growth of layer of graphene film on metal surface.

XU C, SUN J, DONG Y, XIE Y, PAN G, WANG Q, QIAN F

Insulating substrate for patterning and directly growing graphene, involves using graphene, which is directly grown on insulating substrate which has graphene growth catalysis by chemical vapor deposition, and mechanism of direct growth.

SUN J, XU C, DONG Y, XIE Y, XUN M, PAN G, WANG Q