国家/地区 中国（4） 美国（2）
IPC部 B（2） C（2） H（2）
IPC大类 B82（2） H01（2）
IPC小类 B82Y（2） H01L（2）
IPC B82Y040/00（2）
发明人 XU D（4）
公开年 2011（4）
申请年 2011（3） 
专利权人 CHINESE ACAD.（2）

Method for cutting DNA, involves preparing graphene oxide aqueous solution, sterilizing solution, adding solution and metal ions to DNA buffer solution, and reacting obtained mixture at normal temperature.

GUO S, REN H, WANG C, XU D, ZHANG J, ZHENG J, ZHOU X

Graphene nanometer belt preparing method, involves coating transition metal substrate with photo-resist, providing single dimensional scale on surface of transition metal substrate, and obtaining limited graphene nanometer belt.

CHENG X, WANG Z, XIA C, XU D, YU Y, ZHANG Y

Graphene base FET preparing method, involves utilizing nucleating layer and water as oxidant to be reacted with hafnium source, and generating hafnium oxide grid medium layer on graphene layer.

CHENG X, HE D, WANG Z, XIA C, XU D, YU Y, ZHANG Y

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H