国家/地区 中国（4）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L033/00（2）
发明人 XU G（4）
公开年 2011（4）
申请年 2011（3） 
专利权人 SUZHOU INST .（4） SUZHOU NANOW.（4）

Growing method of group III nitride substrate involves providing support substrate, forming graphene layer on surface of group III nitride semiconductor layer and forming group III nitride semiconductor layer on graphene layer.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

LED preparation method, involves forming continuous graphene cover layer on surface of nanometer column array layer, and forming metal electrode layer on surface of cover layer, where array layer is provided with semiconductor substrate.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

Growing method of graphene involves placing nitride substrate in center portion of plate heater, supplying non-oxidizing gas and carbon-containing substance, stopping supply of carbon source, and cooling grown product.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

Metal-semiconductor electrode structure used for nano semiconductor electronic devices, consists of semiconductor layer, metal electrode, and graphene layer arranged between semiconductor layer and metal electrode.

CAI D, FAN Y, LIU L, LIU Z, WANG J, XU G, ZHANG X, ZHONG H