国家/地区 日本（5） 美国（5）
IPC部 H（5） C（4）
IPC大类 H01（5） C01（4）
IPC小类 H01L（5） C01B（4）
IPC C01B031/02（4） H01L021/3205（4） H01L021/768（4）
H01L023/532（4） H01L023/528（3）
发明人 YAMAZAKI Y（5）
公开年 2016（5）
申请年 2015（5） 
专利权人 TOSHIBA KK（5）

Graphene photodetector, has first to fourth high-refractive-index regions and portions sandwiched by first to fourth high-refractive-index regions that constitute integrated optical waveguide.

SUZUKI N, YAMAZAKI Y

Manufacture method of semiconductor device, involves forming graphene interconnect by patterning graphene film into which dopant is introduced.

WADA M, YAMAZAKI Y, MIYAZAKI H, KAJITA A, SAITO T, ISOBAYASHI A, ISHIKURA T, KATAGIRI M, SAKAI T

Graphene wiring structure comprises multilayer graphene and interlayer composites provided between layers of multilayer graphene, such that portion of defect and grain boundary of planar graphene sheet are closed.

SAKAI T, MIYAZAKI H, KATAGIRI M, YAMAZAKI Y

Graphene wiring has interlayer cross-linked layer which includes cross-linked molecular structure including multiple bonded molecules cross-linking graphene sheets included in multilayer graphene.

MIYAZAKI H, SAKAI T, YAMAZAKI Y, KATAGIRI M

Method for manufacturing semiconductor device, involves forming first film, pattern of second film on upper surface of first film and graphene film on upper surface of first film and from side surface of pattern of second film.

ISOBAYASHI A, KITAMURA M, YAMAZAKI Y, KAJITA A, SAITO T, ISHIKURA T, SAKATA A, SAKAI T, WADA M