国家/地区 中国（4）
IPC部 C（3）
IPC大类
IPC小类
IPC
发明人 YU G（4）
公开年 2013（2）
申请年 2012（4）
专利权人 CHINESE ACAD.（2） SHANGHAI INS.（2）

Modification method of graphene thin film, involves contacting metal ion solution with graphene thin film, drying graphene thin film and metal substrate, and removing organic layer to obtain modified graphene film.

CHEN Z, WANG B, ZHANG H, ZHANG Y, WU Y, YU G, ZHAO Z

Preparation of single-crystal graphene used in field of e.g. effect electronic device, involves heating insulating material in non-oxidizing atmosphere, providing carbon source and hydrogen in reaction system and cooling.

GUO Y, LUO B, CHEN J, WU B, HUANG L, GENG D, LIU Y, XUE Y, YU G

Method for manufacturing graphene alkenyl electronic field-effect device e.g. complementary metal oxide semiconductor (CMOS) device, involves exposing out portion of gate electrode to form source and drain electrodes.

CHEN Z, LIU X, WANG H, XIE H, XIE X, YU G, ZHANG Y

Preparing nitrogen-doped graphene useful for preparing electrical devices, comprises heating a catalyst under non-oxidizing atmosphere, inletting carbon and nitrogen source in the reactor to react, and processing chemical vapor deposition.

CHEN J, GENG D, HUANG L, LIU Y, WU B, XUE Y, YU G