国家/地区 中国（6）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 YU G（6）
公开年 2014（6）
申请年 2014（5） 
专利权人 SHANGHAI INS.（4） CHINESE ACAD.（2）

Preparing graphene, comprises e.g. adding metal catalyst to reactor, heating, sealing reactor under vacuum state, closing a vacuum pump, introducing carbon source gas and reducing gas, and maintaining flow rate of reducing gas and inert gas.

GENG D, WANG H, XU J, YU G, LUO B

Wet etching chemical transfer method, useful for improving surface cleanliness of graphene, comprises depositing metal layer on metal-catalyzed substrate and graphene, and coating polymethylmethacrylate organic colloid on metal layer.

SUI Y, ZHANG H, ZHANG Y, YU G, CHEN Z, LI X, ZHU B, TANG C

Continuous graphene film distinguishing method, involves coating organic colloid layer on metal catalytic substrate, where organic colloid layer and graphene film combination are placed in deionized water, and obtaining graphene film.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G, ZHU B, TANG C

Increasing mobility of graphene comprises preparing hydrazine hydrate solution, soaking graphene sample in hydrazine hydrate solution for specified time, and taking out for blow drying.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Fluorine graphene modified organic FET preparation method, involves putting thin film substrate into vacuum oven for drying to obtain clean silicon sheet, and plating modified layer on electrode.

CHEN P, GUO Y, LIU M, XIE X, WANG L, YU G, ZHU M, ZHANG W

Modification method of graphene thin film, involves contacting metal ion solution with graphene thin film, drying graphene thin film and metal substrate, and removing organic layer to obtain modified graphene film.

CHEN Z, WANG B, ZHANG H, ZHANG Y, WU Y, YU G, ZHAO Z