国家/地区 中国（4）
IPC部 H（3） C（2）
IPC大类 H01（3） C01（2）
IPC小类 H01L（3） C01B（2）
IPC H01L021/02（3） H01L029/16（3） H01L021/336（2）
H01L029/24（2） H01L029/417（2） H01L029/66（2）
H01L029/76（2） H01L029/778（2） H01L029/786（2）
发明人 YU M（4）
公开年
申请年
专利权人 SAMSUNG ELEC.（2）

Field effect transistor comprises substrate, gate electrode on substrate, insulating layer, source electrode on insulating layer, drain electrode spaced apart from source electrode, channel between source electrode and drain electrode comprising two-dimensional material and tensile strain region.

KWON J, SEOL M, YOO M, YOO M S, QUAN J, YU M

Field effect transistor has channels having hollow closed cross-sectional structure when viewed in first cross-section formed by plane across source and drain electrodes in direction perpendicular to substrate, and gate insulating layers.

YOO M, SHIN H, KWON J, LEE M, SEOL M, YU M, SHEN X, QUAN J, HYUN L, SHIN H J, YOO M S

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Formation of membrane for e.g. separating water from water/oil emulsion, involves dispersing graphene oxide nanoparticles in solvent, depositing graphene oxide nanoparticles on support, and reducing obtained graphene oxide membrane.

YU M