国家/地区 中国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L033/00（4） H01L033/32（3） H01L033/02（2）
H01L033/06（2）
发明人 ZHANG C（4）
公开年 2022（4）
申请年 2022（4）
专利权人 JIANGXI MTC SEMICONDUCTOR CO LTD（4）

LED epitaxial wafer comprises substrate and buffer sequentially laminated on substrate, intrinsic gallium nitride layer, N-type gallium Nitride layer and multi-quantum well layer, electron blocking layer, and P-type semiconductor layer.

JIN C, HU J, LIU C, CHENG J, YIN C, ZHANG C

Light emitting diode epitaxial wafer used in solid illumination and display field, comprises substrate, first semiconductor layer, multi-quantum well layer and second semiconductor layer stacked in sequence, and quantum well layer and quantum barrier layer stacked periodically and alternately.

JIN C, HU J, CHENG J, YIN C, ZHANG C

Epitaxial structure of LED useful in high-end large power chip, has graphene thin membrane layer provided with a silicon nitride film layer and carbon nanofiber film layer and carbon nanometre film layer formed as a polyurethane film layer or silicon carbide film layer formed as an insulating film.

JIN C, WEN G, DONG G, ZHANG C, YANG L

LED epitaxial wafer comprises substrate, and low temperature nucleating sequentially on substrate, un-doped u-gallium nitride layer, inserting layer comprising first sub-layer laminated sequentially, and second and third sub-layers.

JIN C, HU J, YIN C, CHENG J, ZHANG C