国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6） B82（2）
IPC小类 C01B（6）
IPC C01B031/04（5）
发明人 ZHANG F（6）
公开年 2015（6）
申请年 2015（6）
专利权人 UNIV QINGDAO（3）

Grafting method of three-dimensional porous nitrogen-doped graphene by reducing carbon double bonds of thioamide compound with zinc system reducing agent, grafting amino compound on surface of graphene oxide, decomposing and depositing.

XIA J, XIA Y, ZHANG F, WANG Z, ZHAO Q

Preparation of nanographene powder involves performing plasma arc ionization of methane to carbon ions, rearranging network of carbon ions in reactor to generate complete structure of graphene powder and transferring to powder collector.

ZHANG F

Graphene industrial production device comprises graphite adhesive tape coating machine, graphite adhesive tape machine and separating graphene peeling off machine.

DONG L, JIN S, ZHANG F

Growing three-dimensional nitrogen-doped graphene by taking nano-pore graphene as substrate comprises dispersing graphene oxide in dispersing agent and pore forming agent to obtain dispersion, carbonizing, activating, heating and cooling.

XIA J, ZHANG F, WANG Z, YANG M, ZHAO Q

Preparation of three dimensional nitrogen-doped graphene used for, e.g. supercapacitor by reacting bifunctional reagent thioacetamide, graphene oxide-doped zinc sulfide and nitrogen atom and dissolving in zinc sulfide under acidic condition.

BI S, XIA J, ZHANG F, WANG Z, ZHAO K, YANG M, GUI R, ZHAO C

Low-temperature plasma preparation of graphene by placing pair of electrodes on opposite ends of reactor, placing metal foil substrate, passing through hydrogen gas, passing through carbon source-containing gas and carrier gas, and ionizing.

CHEN W, FENG J, ZHANG B, ZHANG F, ZHENG J, YUN D, WU J, CHENG Q