国家/地区 中国（23）
IPC部 C（10） H（5） B（4）
D（3） G（3）
IPC大类 H01（5） B01（3） C01（3）
C30（3） D01（3） C08（2）
C23（2） G02（2）
IPC小类 H01L（5） C01B（3） C30B（3）
D01D（3） D01F（3） B01D（2）
C23C（2） G02B（2） G02F（2）
IPC C01B031/04（3） D01D005/06（3） C30B007/10（2）
D01F009/12（2） G02F001/01（2） H01L021/02（2）
H01L029/16（2）
发明人 ZHAO C（23）
公开年 2016（23）
申请年 2015（12）  2016（11） 
专利权人 UNIV SHAANXI.（4） UNIV EAST CH.（3） INST MICROEL.（2） NANJING COLL.（2）
RES CENT ECO.（2） UNIV NORTHWE.（2） UNIV XIAN JI.（2）

Preparation of metal cobalt/graphene composite foam material used for e.g. energy storage, involves soaking polyurethane foam in acidic aqueous solution of potassium permanganate, removing, rinsing, heating and drying.

ZHAO C, CAI Y, ZHANG X, WANG W, TANG X, DENG L, QIAN X

Growing method of graphene film on insulating substrate used for electrical or electrochemical device comprises preparing oxidized aqueous graphene solution containing weak acid, adding insulating substrate, hydrothermal reacting and drying.

ZHAO C, WANG S, SHAO X, MA Y, ZHAO L, QIAN X

Method for growing graphene that is utilized in semiconductor device, involves providing single crystal of silicon or germanium substrate, and growing graphene layers on epitaxial layer by chemical vapor deposition.

LUO J, ADAMSON H H, WANG L, ZHAO C, WANG G

Preparing highly oriented graphene fiber comprises taking a large layer of expandable natural flake graphite as raw material, preparing intercalation oxidation and the graphene spinning solution.

CAI J, LIU Y, MIN Y, ZHANG D, ZHAO C

Organic waste gas graphene adsorption recycling device, has three adsorption tanks whose outer side is fixed with heating drying device, and water carburetor connected to solvent recovery device through top condenser.

LIU F, ZHANG S, ZHAO C, FAN F, LV Y

Preparation of graphene/conductive polypyrrole composite film involves adding graphene oxide solution, dispersing, placing in open container, taking pyrrole monomer into another container and placing containers in closed cover.

CAI Y, DENG L, QIAN X, ZHAO C, LI P, SHAO X, WANG S

Preparing reduced graphene oxide-bismuth vanadate crystal with adsorption property comprises e.g. dissolving bismuth(iii) nitrate pentahydrate in dilute nitric acid and stirring, adding oleic acid, n-heptane and acetone, stirring and drying.

TAN G, XIA A, ZHAO C, REN H

Growing graphene involves forming single crystal metal silicide layer on substrate, and growing graphene layer on metal silicide layer using chemical vapor deposition method.

LUO J, ZHAO C

Preparing monoclinic phase bismuth vanadate/graphene oxide (GO)/RGO crystal comprises e.g. dissolving bismuth(III) nitrate pentahydrate in dilute nitric acid, then adding oleic acid, n-heptane, ultrasonic dispersing and post processing.

TAN G, XIA A, ZHAO C, REN H

Constructing molecular knots with graphene electrodes involves selecting graphene, using Raman spectroscopy to analyze graphene and selecting graphene base.

YANG L, ZHANG Q, ZHAO C, LIU L, NYX R, YAO S, TAO S