国家/地区 中国（10）
IPC部 H（6） C（5） B（2）
IPC大类 H01（5） C25（2）
IPC小类 C25D（2） H01L（2）
IPC C25D005/18（2） C25D015/00（2）
发明人 ZHENG X（10）
公开年 2019（10）
申请年 2019（6）  2018（4） 
专利权人 HUANG Y（2） SICHUAN JUCH.（2）

Preparing graphene composite material plating layer includes dispersing graphene oxide in an ionic liquid, using the ionic liquid as a plating solution, and depositing graphite on a cathode substrate by a current control pulse.

HUANG Y, LIU H, ZHENG X

Anti-aging cable material for connecting fire monitoring equipment, contains bisphenol resin, neoprene rubber, high-density polyethylene, graphene, basalt fiber, nano-silica, 1,2-dimethylimidazole and N,N-diisopropyl-p-toluidine.

PAN C, LIU D, ZHENG X, HU B

Preparation of nitride vertical structure LED involves forming multilayered graphite layer on single crystal metal substrate, depositing metal on substrate, activating graphene barrier layer, and preparing layers.

WANG X, LIU F, SHEN B, WU J, RONG X, ZHENG X, SHENG B, SHENG S

Nano-material comprises AOP-KF solid alkali, chlorine dioxide, graphene powder, large pore size silicon dioxide, butyl titanate, cyclohexane and acrylate aqueous laminating adhesive.

ZHENG X, QI P, HU M, LI W, MAO S

Preparation of antimony pentoxide/graphene oxide/carbon cloth electrode material for carbon cloth-based flexible sodium ion battery anion, involves immersing carbon cloth in acetone, taking out, washing, drying, anodizing, and washing.

FEI J, WANG N, HUANG J, CAO L, XU Z, LI J, ZHENG X, LI M

Graphene fiber for e.g. biomedical applications, has uniform diameter and size distribution, and gully structured surface, and gully size and conductivity, which can be controlled by changing size of graphene oxide sheet precursor.

WANG X, LIU Y, YANG Y, ZHENG X

Graphene and silicon nanowires based raman amplifier for complementary metal-oxide-semiconductor device, comprises substrate, insulating layer, silicon-based nanowire, insulator silicon, first silicon-based coupler and barrier layer.

YOU J, LUO Y, JIANG T, ZHENG X, YIN K, ZHANG J, YANG J, WANG Z, YU Y

Method of preparing FET, involves reconstituting carbon atoms on silicon carbide substrate after sublimation of silicon atoms, forming layer of graphene film on substrate surface, and source, drain, and gate are deposited on graphene film.

ZHENG X, YE Z, BAI S, DENG X, LI J, LI Z, SU Y

Printed circuit board (PCB) with graphene-metal composite material as conductive line for motor, has underlying conductive wire that is provided on surface of substrate sheet and has graphene-metal composite layer.

HUANG Y, LIU H, ZHENG X

Graphene alloy wire manufacturing method involves taking insulated paint, adding graphite powder, mixing and stirring into slurry mixture, pouring into extruder material cylinder, adopting continuous extrusion, and drawing.

YANG G, ZHENG X, LI C, WANG Q, ZHANG G