国家/地区 中国（6）
IPC部 H（4） C（2）
IPC大类 H01（4） C01（2）
IPC小类 H01L（3） C01B（2）
IPC C01B032/184（2） H01L033/00（2） H01L033/12（2）
发明人 ZHOU B（6）
公开年 2019（6）
申请年 2019（5） 
专利权人 HC SEMITEK S.（3） HANGZHOU FUX.（2）

Mixed slurry of strong and weak graphene oxide used in graphene thermal conductive film, comprises graphene oxide and a solvent, and the graphene oxide includes strong graphene oxide and weak graphene oxide.

ZHOU B, ZHOU R, LU J, SU D, WANG Z, LI F

Gallium nitride-based LED epitaxial wafer, has metal nanometer particle layer provided with multiple metal nano-particles that are located on graphene layer, where diameter of each metal nano-particles is in specific range.

DING T, ZHOU B, HU J, LI P

Gallium nitride-based high electron mobility transistor epitaxial wafer, comprises substrate, graphene layer, metal nanometer particle layer, three-dimensional nucleation layer, buffer layer, gallium nitride channel layer and aluminum gallium nitride barrier.

DING T, ZHOU B, HU J, LI P

Graphene foam having density and thermal conductivity, prepared by placing in-plane oriented assembly of graphene oxide film in high temperature furnace and heating.

ZHOU B, ZHOU R, LU J

Graphene drying device integrated laminated super capacitor, has supporting foot whose top part is connected with left and right sides of bottom part of box body, and turning claw fixedly connected at bottom part of left side handle rod.

ZHOU S, ZHOU B

Gallium nitride (GaN)-based LED epitaxial wafer, has sacrificial layer that is graphene layer or gallium tellurium layer, and metal film layer including multiple metal islands on sacrificial layer.

DING T, ZHOU B, HU J, LI P