国家/地区 美国（10）
IPC部 C（8） H（6） B（3）
IPC大类 C01（7） H01（6） B82（2）
C07（2） C08（2）
IPC小类 C01B（7） H01L（5） B82B（2）
C07F（2） C08G（2） H01M（2）
IPC C01B031/04（5） B82B003/00（2） H01L029/786（2）
发明人 ZHOU C（10）
公开年 2015（3） 2014（2） 2016（2）
申请年 2014（3）  2015（2） 
专利权人 UNIV SOUTHER.（4） HRL LAB LLC（3）

Composition, useful for making three-dimensional objects, comprises a graphene component, a polymer component, and optionally a carrier.

AICH N, ZHOU C, MASUD A

Method for forming anode of sodium ion battery, involves heat treating red phosphorus precursor and reduced graphene oxide powder under vacuum at preset temperature that vaporizes red phosphorus precursor.

ZHOU C, CAO X, LIU Q, LIU Y, MA Y, SHEN C, CHEN L, ZHANG A, ASIMOW P D

Synthesis of graphene for organic photovoltaic cells, involves providing substrate having catalytic surface and flowing dilute carbon feedstock over catalytic surface of substrate with preset volume of carbon feedstock.

ZHOU C, DE ARCO L G, ZHANG Y

Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.

JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H

Preparation of graphene precursor for large integrated electronic devices involves condensing 1,4-dicyanobenzene with 3-halobenzyl derivative to produce 1,4-bis(3-chlorophenylacetyl)benzene, oxidizing, and reacting with dibenzyl ketone.

ZHOU C, SALGUERO T T

Production of graphene used in production of graphene-based nanostructures, involves treating combination of substrate chosen from silicon, silicon carbide or metal and graphene precursor and converting obtained intermediate.

ZHOU C, SALGUERO T T

Graphene-composite functional material for preparing e.g. piezoresistive material, comprises sulfonated graphene-grafted poly-3,4-(ethylene dioxythiophene).

BAO Y, CHEN S, CHEN Z, WANG J, XU G, YANG C, XING C, ZHOU C, LOU J, ZHU T

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Combination of substrate comprising silicon, silicon carbide or metal and graphene precursor with aromatic structure e.g. benzene and functional groups e.g. dienes to grow graphene structure used in e.g. large integrated electronic devices.

ZHOU C, SALGUERO T T

Method for manufacturing FET e.g. self-aligned graphene FET for graphene device, involves inhibiting deposition of metal layer over specific portion of thin film proximate foot region by head region of gate electrode.

ZHOU C, BADMAEV A, WANG C, CHE Y