国家/地区 中国（4）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 ZHOU P（4）
公开年 2012（4）
申请年 2011（2）  2012（2） 
专利权人 UNIV FUDAN（4）

Method for increasing high-k dielectric constant on graphene buffer layer utilized for manufacturing carbon-based integrated circuit, involves providing graphene thin film to grow high dielectric constant and preparing buffer solution.

SHEN Y, SUN Q, WANG P, ZHOU P, ZHANG W

Method for growing high k dielectric for e.g. use in nanoscale preparation of planar device, involves using zinc oxide seed layer to prepare zinc oxide thin film on graphene film by using electron beam vacuum evaporation.

SHEN Y, SUN Q, WANG P, ZHOU P, ZHANG W

Method for measuring thickness and band structure of graphene film, involves establishing proper theory model according to structure of film and fitting analyzed elliptical data to aluminum foil stock to establish theory model base.

SHEN Y, SUN Q, WANG P, ZHANG W, ZHOU P

Electric-induction reduction of graphene oxide in manufacture of integrated circuit, involves forming graphene layer on substrate, oxidizing graphene layer to form graphene oxide, and reducing graphene oxide using electric contact probe.

SUN Q, WEI H, ZHANG W, ZHOU P