国家/地区 世界知识产权组织（7）
IPC部 C（4） H（3） B（2）
IPC大类 H01（3） C01（2） C08（2）
IPC小类 C01B（2） C08K（2） C08L（2）
H01L（2）
IPC C08K003/04（2）
发明人 ZHU W（7）
公开年 2021（2） 2022（2）
申请年 2020（2）  2021（2） 
专利权人 CSG ELECTRIC.（2） ELECTRIC POW.（2） INT BUSINESS.（2）

Mask with purifying function for filtering air inlet nose, has shock absorbing spring whose tail end is fixedly connected with nose support.

ZHU W

Polypropylene cable protective layer comprises dielectric layer, a buffer layer and an insulating layer from inside to outside and buffer layer obtained by wrapping polypropylene film comprises polypropylene, graphene oxide and maleic anhydride grafted polypropylene.

ZHAO X, ZHAN Y, ZHU W, FENG B, NIE Y, HUI B, HOU S, FU M, ZHANG Y, LI X, JIA L

Preparing composite material loaded with nano magnesium hydride in hydrogen storage, involves adding cationic surfactant in aqueous dispersion of two-dimensional transition metal carbide, wrinkling two-dimensional transition sheet.

REN L, ZHU W, ZOU J

Semi-conductive shielding material comprises ethylene butyl acrylate resin, conductive carbon black, functional additives, the conductive carbon black includes high oil and low oil absorption value conductive carbon black.

HOU S, LI X, FU M, ZHU W, HUI B, FENG B, ZHANG Y, WU G, XIE H, CHEN X, XU S

Manufacture of structure-controllable three-dimensional graphene porous material involves preparing porous metal structure, heating, cooling, performing sand blasting, growing graphene film, washing and drying.

SHI Y, YAN C, ZHU W

Graphene-based memory device e.g. flash memory has initial graphene layer which is configured to bend into opening to contact final graphene layer based on initial electrostatic force.

ZHU W

Semiconductor structure of semiconductor device e.g. MOSFET used in electronic device e.g. personal computer, has nitride layer which is formed on graphene layer between source electrode and drain electrode.

AVOURIS P, NEUMAYER D, ZHU W, NEUMAYER D A