国家/地区 中国（8）
IPC部 C（5） H（4） B（3）
IPC大类 C01（5） H01（4） B01（2）
IPC小类 C01B（4） B01J（2） H01L（2）
IPC C01B031/04（4）
发明人 ZHU Y（8）
公开年 2013（6） 2014（2）
申请年 2013（8）
专利权人 INST COAL CH.（2） UNIV BEIJING.（2）

Preparation of graphene by mixing solid organic acid and catalyst, placing mixture in reactor, reacting under inert or reducing gas protection, cooling to room temperature, washing solid product, filtering, and drying.

CUI H, MENG X, ZHENG J, ZHU Y, ZHU Z

Graphene synthesis involves mixing solid organic acid and sodium carbonate catalyst, placing mixture in reactor under protection of inert gas or reducing gas atmosphere, reacting, cooling reaction system, filtering and drying solid product.

CUI H, MENG X, ZHENG J, ZHU Y, ZHU Z

Preparation of non-metallic heteroatom-doped graphene oxide used as reduction catalyst, by formulating graphene oxide solution, adding non-metallic reducing agent, stirring, maintaining temperature, centrifuging, washing and drying.

ZHU Y, CHEN L, CUI X, SHI J, WANG Y

Surface-coated graphene metal catalyst comprises comprises inorganic acid, amino-modified polyelectrolyte, graphene coating layer and metal nanoparticles loaded metal.

YE H, ZHOU Y, ZHU Y, YU L

Synthesis of graphene two-dimensional nickel hydroxide nanomaterial comprises dissolving nickel salt and alkaline reagent in hydrophilic solvent, dissolving hexavalent chromium in solution, condensing and refluxing under microwave.

CAO C, LI J, YANG X, ZHU Y

CVD graphene process based flexible device and substrate manufacturing method, involves forming flexible substrate, and coating graphene-containing layer on surface of graphite dilute purification layer.

XU C, ZHU Y, GUO W, HAN J, SUN J

Preparation of graphene film for counter electrodes of dye-sensitized solar cells, involves spraying graphene oxide dispersion on preheated substrate, and reducing formed film by hydrazine reduction and high-temperature calcination.

HUANG J, XU F, PENG F, CHEN K, DING N, GUO L, SUN L, ZHANG Y, ZHU Y, WANG H

Transparent electrode graphene film preparing method, involves arranging p-type and n-type gallium nitride layers on LED epitaxial wafer, and removing impurities on graphene film and indium tin oxide thin layer by photo-etching process.

SUN J, MAO M, XU K, XU C, DENG J, ZHENG L, XIE Y, ZHU Y