国家/地区 中国（5）
IPC部 C（3）
IPC大类
IPC小类
IPC
发明人 ZHU Z（5）
公开年 2012（3） 2013（2）
申请年 2012（5）
专利权人 UNIV DONGHUA（2）

MOSFET, has source/drain region formed on semiconductor substrate, and gate conductor extended toward upper part of source/drain region, where semiconductor substrate is formed with oxide semiconductor substrate and graphene layer.

CHEN L, LUO Z, ZHU Z

Manufacture of layer of graphene film on silicon-carbide substrate involves coating silicon-carbide substrate with tantalum-carbide graphite base, flowing hydrogen and subjecting system with substrate to carbonization temperature.

ZHU Z, YIN Z, ZHAO Z, LU D, LI Y

Preparing graphene/polyaniline laminated films useful for sensors and supercapacitors, by immersing processed substrate in polyaniline solution, drying substrate, immersing substrate in graphene dispersion liquid, and drying substrate.

CHEN Y, LUO J, MA Q, ZHU Z

Graphene oxide interlayer loaded nanocobaltosic oxide catalyst comprises cobaltosic oxide loaded on graphene oxide nanosheet.

BI D, CHEN M, GUO G, GUO M, LI D, LI Y, LI J, SHAO X, REN J, TAN D, WAN F, SHI P, SU R, ZHU M, ZHU S, ZHANG W, ZHU Z, SUN X

Preparing graphene oxide immobilized alkali protease, comprises dissolving graphite oxide by phosphate buffer solution, magnetically stirring, ultrasonically processing, adding glutaraldehyde, centrifuging, and adding alkali protease.

BI D, CHEN M, GUO M, GUO G, LI D, LI Y, SHI P, LI J, SHAO X, TAN D, SU R, ZHU S, ZHANG W, ZHU Z, SUN X