国家/地区 美国（4）
IPC部 B（4）
IPC大类 B01（4） C01（4） H01（3）
B82（2） C23（2）
IPC小类 B01J（4） C01B（4） B82B（2）
C23C（2） H01B（2）
IPC B01J019/08（4）
发明人
公开年 2013（3）
申请年 2012（4）
专利权人

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Preparing graphene which is used for construction of devices e.g. integrated circuits, comprises bombarding a surface of a silicon carbide substrate with ions (of e.g. gold), and annealing a volume of the substrate at the bombarded surface.

GILA B P, APPLETON B R, LEMAITRE M G, TONGAY S

Method of etching atomic layer of graphene used for semiconductor device, involves adsorbing reactive radical to surface of graphene, and irradiating energy source to graphene to which reactive radical is adsorbed.

YEOM G Y, LIM W S, MIN K S, KIM Y Y, OH J S

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S