国家/地区 韩国（5） 美国（4） 世界知识产权组织（2）
IPC部 B（5） C（5）
IPC大类 B01（5） C01（5） B82（2）
IPC小类 B01J（5）
IPC B01J019/12（5）
发明人 YOON Y H（2）
公开年 2014（5）
申请年 2013（5）
专利权人 GRAPHENEALL .（2） SAMSUNG ELEC.（2）

Apparatus useful for manufacturing graphene, comprises source decomposition unit to decompose carbon source set on one side of a forming chamber, and a feeding unit to supply catalyst metal via source decomposition unit and forming chamber.

MOON J, KIM T, CHOI M, JUNG M

Hydrogen treated graphene surface having specified band gap and hole mobility.

HONG J I, SON J Y, HONG J, SON J, SUN Z

Formation of graphene quantum dot used for e.g. radiator, involves applying microwaves to graphene oxide material, oxidizing reduced graphene oxide product, applying microwaves to graphene oxide product, and processing product.

YOON Y H

Formation of graphene oxide used for e.g. secondary battery, involves oxidizing graphite using acid, recovering acid from primary reaction product, and then oxidizing graphite using recovered acid.

YOON Y H

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J